Order results by:
| Issue | Title | |
| Vol 2, No 5 (2007) | The research of process of CdTe passivation coverings formation on epitaxial layers CdхHg1-хTe for creation of IRphotodetectors. | Abstract similar documents |
| V. V. Arbenina, T. V. Danilova, A. S. Kashuba, E. V. Permikina | ||
| "... The features of formation passivation coverings of cadmium telluride on epitaxial layers CdхНg1-хТе ..." | ||
| Vol 4, No 4 (2009) | The influence of the epitaxial layers surface morphology and polarity on quality of passivating coating and the parameters of arrays photosensitive devices on base CdхHg1-хTe | Abstract similar documents |
| I. D. Burlakov, A. S. Kashuba, S. V. Golovin, E. V. Permikina, V. V. Arbenina | ||
| "... polarity of CdхHg1-хTe epitaxial layers on velocity of the CdTe coating precipitation and surface ..." | ||
| Vol 8, No 6 (2013) | Influence of CdхHg1-хTe epitaxial layers defects on photo-electric parameters of matrix detector devices | Abstract similar documents |
| V. V. Arbenina, A. S. Kashuba, Е. V. Permikina | ||
| "... molecules Tе2 result in formation CdxHg1-xTe epitaxial layers defects in process MBE epitaxial growth ..." | ||
| Vol 5, No 5 (2010) | The study of morphology of heteroepytaxial structures on the basis of photosensitive layers CdXHg1-XTe by electron probe analysis methods | Abstract similar documents |
| А. С. Kashuba, A. V. Zablotsky, E. V. Korostylev, A. A. Kuzin, E. V. Permikina, V. V. Arbenina | ||
| "... Data of morphology of epitaxial layers CdXHg1-XTe, which has been grown on substrates GaAs (310 ..." | ||
| Vol 4, No 2 (2009) | The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD. | Abstract similar documents |
| A. A. Marmalyuk, D. E. Arbenin, E. V. Burlyaeva | ||
| "... ПРИ ВЫРАЩИВАНИИ ЭПИТАКСИАЛЬНЫХ СЛОЕВ НА ОСНОВЕ GaAs МЕТОДОМ МОС-ГИДРИДНОЙ ЭПИТАКСИИ *А.А. Мармалюк ..." | ||
| Vol 10, No 3 (2015) | Computer modeling of processes of semiconductor technology through information-calculating system | Abstract similar documents |
| V. V. Arbenina, R. Kh. Akchurin, L. B. Berliner | ||
| "... of semiconductor technology associated with the formation of single crystals and epitaxial heterostructures based ..." | ||
| Vol 8, No 4 (2013) | ETCHING MECHANISM OF CCl4-DOPED GaAs GROWN BY MOCVD | Abstract similar documents |
| Т. А. Bagaev, М. А. Ladugin, А. А. Padalitsa, А. А. Marmalyuk | ||
| "... Recently carbon-doped epitaxial layers become more attractive in most practical applications ..." | ||
| Vol 10, No 6 (2015) | High-resolution microscopy methods for surface morphology semiconductors investigation | Abstract similar documents |
| A. E. Mirofyanchenko, A. S. Kashuba, E. V. Pryanikova, N. I. Yakovleva, V. V. Arbenina | ||
| "... used “tapping mode” which is well suited for epitaxial structures. SEM images were obtained ..." | ||
| Vol 5, No 2 (2010) | Model of vertical crystal growth of Cd(1-x)ZnxTe single-crystals | Abstract similar documents |
| L. A. Gvelesiani | ||
| "... исследованиях [3–6], в качестве подложечного материала при изготовлении эпитаксиальных слоев узкозонных ..." | ||
| Vol 8, No 5 (2013) | INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY | Abstract similar documents |
| A. L. Sizov, I. D. Burlakov, N. I. Yakovleva, E. D. Korotaev, A. E. Mirofyanchenko | ||
| "... - ложки для выращивания структурно-совершен- ных эпитаксиальных слоев КРТ, являются: вы- сокое структурное ..." | ||
| Vol 8, No 4 (2013) | CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS InXGa1-XAs ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR | Abstract similar documents |
| A. A. Gorskiy, L. B. Berliner, E. V. Titova | ||
| "... П остроена расчетная модель процесса выращивания эпитаксиальных изопериодических нанослоев ..." | ||
| Vol 8, No 4 (2013) | THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD | Abstract similar documents |
| Т. А. Bagaev, М. А. Ladugin, А. А. Padalitsa, А. А. Marmalyuk | ||
| "... является исполь- зование дополнительных эпитаксиальных слоев (ЭС), компенсирующих напряжения, введенные ..." | ||
| Vol 9, No 4 (2014) | The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions | Abstract similar documents |
| A. A. Gorskiy | ||
| "... лавинных фото- диодов и квантово-каскадных лазеров осуществля- ется с помощью чередования эпитаксиальных ..." | ||
| Vol 2, No 3 (2007) | Formation nano-sized binary Pt(Pd)-Rh/y- AI2O3+ZrxCe1-xO2 catalysts in high-temperature conversion CO, NOx and carbon hydrоcarbons | Abstract similar documents |
| A. M. Bolshakov, S. P. Denisov | ||
| "... бинарного катализатора является эпитаксиальное сращивание с подложкой, чего не наблюдается в случае моно ..." | ||
| Vol 6, No 2 (2011) | Numerical study of free convection effect for directional crystal growth of CdZnTe single-crystals | Abstract similar documents |
| L. B. Berliner, L. A. Gvelesiani | ||
| "... конвективных пото- ков важна для понимания изменения радиальной и осевой сегрегации Zn в расплаве CdTe ..." | ||
| Vol 11, No 5 (2016) | THE USE OF COPPER INDICATOR ELECTRODES IN VOLTAMMETRIC ANALYSIS | Abstract PDF (Eng) similar documents |
| L. Yu. Martynov, O. A. Naumova, N. K. Zaytsev, I. Yu. Lovchinovsky | ||
| "... ). In contrast, in case of electrodes of noble metals, passivation of the surface due to adsorption ..." | ||
| Vol 1, No 6 (2006) | Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations | Abstract similar documents |
| A. A. Maldzhy, R. Kh. Akchurin, A. A. Marmalyuk | ||
| "... . Эпитаксиальный рост проводился на подложках n-GaAs (100). В табл. 1 представлены характеристики изучаемых ..." | ||
| Vol 1, No 3 (2006) | Research of process of anodi dissolution of nicke | Abstract similar documents |
| O. V. Chernyshova, D. V. Drobot, V. I. Chernyshov | ||
| "... образование гидридов. За счет протекания этих процессов происходит разрушение пассивирующей пленки. Третий ..." | ||
| Vol 6, No 5 (2011) | Functional oxide films obtained from chemical solutions | Abstract similar documents |
| Yu. Ya. Tomashpolsky | ||
| "... микроскопе, и микрофотография эпитаксиальной пленки YBa2Cu3O7 на высококристаллической стадии после отжига ..." | ||
| Vol 6, No 1 (2011) | On lexical and grammar features of chemical science prose | Abstract similar documents |
| L. A. Ivanova | ||
| "... : During the 1980’s, improvements in the growth technique of mismatched SiGe epitaxial films on Si ..." | ||
| Vol 5, No 5 (2010) | Numeric computation of the radiative heat transfer for vertical crystal growth of CdZnTe single-crystals | Abstract similar documents |
| L. B. Berliner, L. A. Gvelesiani | ||
| "... установки. ЛИТЕРАТУРА: 1. Датчики ионизирующего излучения на основе кристаллов CdTe и Cd1-xZnxTe / А ..." | ||
| Vol 9, No 5 (2014) | Estimation of diffusion behaviour of metals used for the creation of multilayered contacts to heterostructures based on GaAs | Abstract similar documents |
| V. V. Arbenina, A. S. Kashuba, E. V. Permikina | ||
| "... омичес- ких контактов к эпитаксиальным гетерострук- турам. Это обусловлено сокращением размеров ..." | ||
| Vol 5, No 5 (2010) | Heat transfer in the circuit of a crystal polymer | Abstract similar documents |
| A. L. Matveeava, E. S. Savin | ||
| "... , фазовых переходов в молекулярных кристаллах, поверх- ностных эпитаксиальных структур и т.д.), в тех ..." | ||
| Vol 6, No 1 (2011) | Nanocomposite gels | Abstract similar documents |
| R. R. Bulatova, I. V. Bakeeva | ||
| "... рассмотрены в работе [86]. Первоначально получали наночастицы CdTe восстановлением теллура боргидридом ..." | ||
| Vol 5, No 1 (2010) | Formation of thin-film ZrO2-Y2O3 electrolyte of solid oxide fuel cell by pulsed electron-beam treatment and magnetron sputtering method | Abstract similar documents |
| A. A. Soloviev, N. S. Sochugov, A. V. Shipilova, V. P. Rotshtein, A. E. Tumashevskaya, K. B. Efimova | ||
| "... ionic conductivity at interfaces of epitaxial ZrO2:Y2O3/SrTiO3 heterostructures / J. Garcia ..." | ||
| Vol 10, No 5 (2015) | The composition of anodic oxide films on InAs crystals | Abstract similar documents |
| A. V. Artamonov, V. P. Astakhov, I. B. Varlashov, N. I. Evstaf’Eva, P. V. Mitasov | ||
| "... полупроводника и второй (пассивирующей) диэлектрической пленки. Указан- ное обстоятельство особенно важно для ..." | ||
| Vol 5, No 5 (2010) | Methods of synthesis of nanoparticles and their dimensionsensitive physical parameters | Abstract similar documents |
| L. I. Boguslavsky | ||
| "... , CoSO4 Fe–Co A FeSO4, NiSO4 Fe–Ni A FeSO4, oSO4, NiSO4 Fe–Co-–Ni A CdSO4 + TeO2 CdTe K *Размер ..." | ||
| Vol 13, No 1 (2018) | USING AN ACTIVATED COPPER MICROELECTRODE FOR VOLTAMMETRIC DETERMINATION OF ALCOHOLS | Abstract similar documents |
| L. Yu. Martynov, T. V. Sitnikova, M. A. Lazov, I. Yu. Lovchinovsky, N. K. Zaitsev | ||
| "... потенциала поляризации. при более положительных потенциалах, то это при- водит к образованию пассивирующего ..." | ||
| 1 - 28 of 28 Items | ||
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