Order results by:
| Issue | Title | |
| Vol 1, No 6 (2006) | Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations | Abstract similar documents |
| A. A. Maldzhy, R. Kh. Akchurin, A. A. Marmalyuk | ||
| "... The stable, metastable and unstable regions of InGaAs/GaAs heterostructures to the formation ..." | ||
| Vol 8, No 4 (2013) | THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD | Abstract similar documents |
| Т. А. Bagaev, М. А. Ladugin, А. А. Padalitsa, А. А. Marmalyuk | ||
| "... Strained InGaAs/AlGaAs quantum wells based on GaAs substrates are successfully used in wide ..." | ||
| Vol 8, No 4 (2013) | ETCHING MECHANISM OF CCl4-DOPED GaAs GROWN BY MOCVD | Abstract similar documents |
| Т. А. Bagaev, М. А. Ladugin, А. А. Padalitsa, А. А. Marmalyuk | ||
| "... . In this paper we have considered the mechanisms of etching of CCl4-doped GaAs grown by MOCVD ..." | ||
| Vol 10, No 6 (2015) | High-resolution microscopy methods for surface morphology semiconductors investigation | Abstract similar documents |
| A. E. Mirofyanchenko, A. S. Kashuba, E. V. Pryanikova, N. I. Yakovleva, V. V. Arbenina | ||
| "... morphology investigations of semiconductors such as Ge, MCT, InSb, AlGaN, InGaAs is shown. These materials ..." | ||
| Vol 9, No 5 (2014) | Estimation of diffusion behaviour of metals used for the creation of multilayered contacts to heterostructures based on GaAs | Abstract similar documents |
| V. V. Arbenina, A. S. Kashuba, E. V. Permikina | ||
| "... of the size of diffusion areas on the interphase boundaries in systems metal (Au, Ti, Pt)/GaAs and metal ..." | ||
| Vol 4, No 2 (2009) | The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD. | Abstract similar documents |
| A. A. Marmalyuk, D. E. Arbenin, E. V. Burlyaeva | ||
| "... The algorithm was worked out, witch allows to define obtained GaAs-based layers characteristics ..." | ||
| Vol 5, No 5 (2010) | The study of morphology of heteroepytaxial structures on the basis of photosensitive layers CdXHg1-XTe by electron probe analysis methods | Abstract similar documents |
| А. С. Kashuba, A. V. Zablotsky, E. V. Korostylev, A. A. Kuzin, E. V. Permikina, V. V. Arbenina | ||
| "... Data of morphology of epitaxial layers CdXHg1-XTe, which has been grown on substrates GaAs (310 ..." | ||
| Vol 8, No 4 (2013) | CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS InXGa1-XAs ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR | Abstract similar documents |
| A. A. Gorskiy, L. B. Berliner, E. V. Titova | ||
| "... . Kuan H., Su Y.K. Growth of GaAs and InGaAs by MOCVD using a tertiarybutylarsine source ..." | ||
| Vol 9, No 4 (2014) | The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions | Abstract similar documents |
| A. A. Gorskiy | ||
| "... ., Zhang B.L., Huang G.Sh. MOCVD growth of InGaAsP/InGaAs multi- step-quantum well structure for QWIP ..." | ||
| Vol 8, No 6 (2013) | Influence of CdхHg1-хTe epitaxial layers defects on photo-electric parameters of matrix detector devices | Abstract similar documents |
| V. V. Arbenina, A. S. Kashuba, Е. V. Permikina | ||
| "... молекулярно-лучевой эпитаксии на опти- чески прозрачных подложках GaAs. Толщина рабочих эпитаксиальных слоев ..." | ||
| Vol 3, No 4 (2008) | Database on properties and technical characteristics of semiconductor materials | Abstract similar documents |
| T. V. Stol'nikova, K. Yu. Kolybanov, V. V. Arbenina | ||
| "... составами и типами материала: в системе Ga- As может существовать как соединение GaAs, так и твердый ..." | ||
| Vol 10, No 3 (2015) | Computer modeling of processes of semiconductor technology through information-calculating system | Abstract similar documents |
| V. V. Arbenina, R. Kh. Akchurin, L. B. Berliner | ||
| "... – соединений AIIIBV: AlP, AlAs, AlSb, GaP, GaAs, GaSb, InР, InAs и InSb, для которых заложены следующие ..." | ||
| Vol 8, No 5 (2013) | INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY | Abstract similar documents |
| A. L. Sizov, I. D. Burlakov, N. I. Yakovleva, E. D. Korotaev, A. E. Mirofyanchenko | ||
| "... высокая стоимость, взамен КЦТ используют альтерна- тивные подложки, в частности, Si, GaAs, Ge и InSb [3 ..." | ||
| Vol 7, No 5 (2012) | Influence of external substance addition on equilibrium reaction system state | Abstract similar documents |
| Yu. A. Pisarenko, O. O. Usoltseva, C. A. Cardona | ||
| "... степени протекания химической реакции можно представить в следующем виде: PTPT PT GAa , 2 2 ..." | ||
| 1 - 14 of 14 Items | ||
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