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CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS InXGa1-XAs ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR

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Abstract

A three-dimensional (3D) detailed heat, mass and momentum transfer model was constructed to describe the thermal behavior, fluid dynamics and the diffusion in a horizontal metal-organic vapor-phase epitaxy (MOVPE) reactor with a rectangular section and a rotated substrate keeper with inductive heating used for numerical studying to obtain optimum conditions for the growth process and to calculate the growth rate and the composition of In<sub>x</sub>Ga<sub>1-x</sub>As nanolayers.

About the Authors

A. A. Gorskiy
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation


L. B. Berliner
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation


E. V. Titova
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation


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For citation:


Gorskiy A.A., Berliner L.B., Titova E.V. CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS InXGa1-XAs ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR. Fine Chemical Technologies. 2013;8(4):85-91. (In Russ.)

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