The study of morphology of heteroepytaxial structures on the basis of photosensitive layers CdXHg1-XTe by electron probe analysis methods
Abstract
Data of morphology of epitaxial layers CdXHg1-XTe, which has been grown on substrates GaAs (310) by MBE, have been presented. Peculiarities of growing V-defects have been studied by scanning electronic microscopy techniques and EDS. The structure, orientation, chemical composition of V-defects, causes of appearance and formation have been studied.
About the Authors
А. С. Kashuba
ФГУП «НПО «Орион»
Russian Federation
Russian Federation
A. V. Zablotsky
Московский физико-технический институт
Russian Federation
Russian Federation
E. V. Korostylev
Московский физико-технический институт
Russian Federation
Russian Federation
A. A. Kuzin
Московский физико-технический институт
Russian Federation
Russian Federation
E. V. Permikina
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation
Russian Federation
V. V. Arbenina
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation
Russian Federation
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Review
For citations:
Kashuba А.С., Zablotsky A.V., Korostylev E.V., Kuzin A.A., Permikina E.V., Arbenina V.V. The study of morphology of heteroepytaxial structures on the basis of photosensitive layers CdXHg1-XTe by electron probe analysis methods. Fine Chemical Technologies. 2010;5(5):19-23. (In Russ.)
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