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THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD

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Abstract

Strained InGaAs/AlGaAs quantum wells based on GaAs substrates are successfully used in wide optoelectronic applications. In this paper the advantages of these strained wells and their manufacturing difficulties in MOCVD have been described. In order to estimate the quality of InGaAs/AlGaAs quantum wells with and without GaAsP compensation layer the photoluminescence method at room temperature was used. It is shown that optimal thickness and content of InGaAs layers lies in the small metastable region, which was accurately calculated. The effective critical stress, which leads to misfit dislocations formation, was found and equals to 0.014mGaAs (where mGaAs is rigidity modulus in GaAs). The GaAsP compensation layers close to highly strained quantum wells for better reproducibility of the growth method were proposed. Finally, the best position of the GaAsP layer for higher photoluminescence signal has been chosen and discussed.

About the Authors

Т. А. Bagaev
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation


М. А. Ladugin
ООО «Сигм Плюс», Москва, 117342
Russian Federation


А. А. Padalitsa
ООО «Сигм Плюс», Москва, 117342
Russian Federation


А. А. Marmalyuk
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation


References

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For citation:


Bagaev Т.А., Ladugin М.А., Padalitsa А.А., Marmalyuk А.А. THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD. Fine Chemical Technologies. 2013;8(4):73-76. (In Russ.)

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ISSN 2410-6593 (Print)
ISSN 2686-7575 (Online)