INVESTIGATION OF Ge SUBSTRATES FOR MCT GROWN BY MOLECULAR-BEAM EPITAXY

Methods of chem-mech polishing and chemical etching were described, and characteristics of Ge wafers were investigated corresponding to technical requirements of MBE growth. Investigation methods included optical microscopy, X-ray diffraction analysis, high-resolution diffraction analysis, AFM and IR-Fourier microscopy.

MCT, germanium, substrate, molecular beam epitaxy, heteroepitaxial structures, surface, structural properties.

1. Henini M., Razeghi M.Ed. Handbook of Infrared Detection Technologies. - Oxford: Elsevier Science, 2002. Р. 318-320.

2. Dhanaraj G., Byrappa K., Prasad V., Dudley M. Hadbook of Crystal Growth. - NY: Springer, 2010. 1102 p.

3. Варавин В.С., Гутаковский А.К., Дворецкий С.А., Карташев В.А., Латышев А.В., Михайлов Н.Н., Придачин Д.Н., Ремесник В.Г., Рыхлицкий С.В., Сабинина И.В., Сидоров Ю.Г., Титов В.П., Швец В.А., Якушев М.В., Асеев А.Л. Состояние и перспективы молекулярно-лучевой эпитаксии CdxHg1-xTe // Прикладная физика. 2002. № 6. С. 25-41.

4. Vilela M.F., Buell A.A., Newton M.D., Venzor G.M., Childs A.C., Peterson J.M., Franklin J.J., Bornfreund R.E., Radford W.A., Johnson S.M. Control and growth of middle wave infrared (MWIR) Hg1−xCdxTe on Si by molecular beam epitaxy //J. Electron. Mater. 2005. V. 34. № 6. P. 898-904.

5. Zanatta J.P., Ferret P., Theret G., Million A., Wolny M., Chamonal J.P., Destefanis G. Hetero-epitaxy of HgCdTe (211)B on Ge substrates by molecular beam epitaxy for infrared detectors // J. Electron. Mater. 1998. V. 27. № 6. P. 542-545.

6. Tribolet P., Blondel S., Costa P., Combette A., Vial L., Destefanis G., Ballet P., Zanatta J.P., Gravrand O., Largeron C., Chamonal J.P., Million A. MWIR focal planes arrays made with HgCdTe grown by MBE on germanium substrates // Proc. SPIE. 2006. V. 6206. [6206-82]. doi:10.1117/12.669120.

7. Zanatta J.P., Badano G., Ballet P., Largeron C., Baylet J., Gravrand O., Rothman J., Castelein P., Chamonal J.P., Million A., Destefanis G., Mibord S., Brochier E., Costa P. Molecular beam epitaxy growth of HgCdTe on Ge for third-generation infrared detectors // J. Electron. Mater. 2006. V. 35. № 6. P. 1231-1236.

8. Zanatta J.P., Duvaut P., Ferret P., Million A., Destefanis G., Rambaud P., Vannuffel C. Growth of HgCdTe and CdTe(331)B on germanium substrate by molecular beam epitaxy // Appl. Phys. Lett. 1997. V. 71. P. 2984-2996.

9. Якушев М.В., Брунев Д.В, Варавин В.С., Васильев В.В., Дворецкий С.А., Марчишин И.В., Предеин А.В., Сабинина И.В., Сидоров Ю.Г., Сорочкин А.В. Гетероструктуры HgCdTe на подложках Si(310) для инфракрасных фотоприемников средневолнового спектрального диапазона // Физика и техника полупроводников. 2011. Т. 45. Вып. 3. C. 396-402.