ETCHING MECHANISM OF CCl4-DOPED GaAs GROWN BY MOCVD
Abstract
About the Authors
Т. А. BagaevRussian Federation
М. А. Ladugin
Russian Federation
А. А. Padalitsa
Russian Federation
А. А. Marmalyuk
Russian Federation
References
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For citation:
Bagaev Т.А., Ladugin М.А., Padalitsa А.А., Marmalyuk А.А. ETCHING MECHANISM OF CCl4-DOPED GaAs GROWN BY MOCVD. Fine Chemical Technologies. 2013;8(4):77-79. (In Russ.)