ETCHING MECHANISM OF CCl4-DOPED GaAs GROWN BY MOCVD
Abstract
Recently carbon-doped epitaxial layers become more attractive in most practical applications. In this paper we have considered the mechanisms of etching of CCl<sub>4</sub>-doped GaAs grown by MOCVD in the temperature range of 600–800°C. It has been shown that, as temperature increases, the etching of solid GaAs with the formation of volatile GaCl3 becomes the leading contribution to the growth rate reduction.
About the Authors
Т. А. Bagaev
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation
Russian Federation
М. А. Ladugin
Sigm Plus, Moscow, 117342
Russian Federation
Russian Federation
А. А. Padalitsa
Sigm Plus, Moscow, 117342
Russian Federation
Russian Federation
А. А. Marmalyuk
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571;
Sigm Plus, Moscow, 117342
Russian Federation
Russian Federation
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Review
For citations:
Bagaev Т.А., Ladugin М.А., Padalitsa А.А., Marmalyuk А.А. ETCHING MECHANISM OF CCl4-DOPED GaAs GROWN BY MOCVD. Fine Chemical Technologies. 2013;8(4):77-79. (In Russ.)
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