ETCHING MECHANISM OF CCl₄-DOPED GaAs GROWN BY MOCVD

Recently carbon-doped epitaxial layers become more attractive in most practical applications. In this paper we have considered the mechanisms of etching of CCl₄-doped GaAs grown by MOCVD in the temperature range of 600–800°C. It has been shown that, as temperature increases, the etching of solid GaAs with the formation of volatile GaCl3 becomes the leading contribution to the growth rate reduction.

GaAs, CCl₄ doping, etching mechanism, MOCVD.

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