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ETCHING MECHANISM OF CCl4-DOPED GaAs GROWN BY MOCVD

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Abstract

Recently carbon-doped epitaxial layers become more attractive in most practical applications. In this paper we have considered the mechanisms of etching of CCl<sub>4</sub>-doped GaAs grown by MOCVD in the temperature range of 600–800°C. It has been shown that, as temperature increases, the etching of solid GaAs with the formation of volatile GaCl3 becomes the leading contribution to the growth rate reduction.

About the Authors

Т. А. Bagaev
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation


М. А. Ladugin
Sigm Plus, Moscow, 117342
Russian Federation


А. А. Padalitsa
Sigm Plus, Moscow, 117342
Russian Federation


А. А. Marmalyuk
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571; Sigm Plus, Moscow, 117342
Russian Federation


References

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For citation:


Bagaev Т.А., Ladugin М.А., Padalitsa А.А., Marmalyuk А.А. ETCHING MECHANISM OF CCl4-DOPED GaAs GROWN BY MOCVD. Fine Chemical Technologies. 2013;8(4):77-79. (In Russ.)

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ISSN 2410-6593 (Print)
ISSN 2686-7575 (Online)