The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions

In this paper, we investigate the possibility of using gas mixer precursor for MOCVD to get sharper heterojunctions InxGa1-xAs, InxGa1-xAs и InxAl1-xAs. Nanolayers of that compositions are using in creations of quantum well devices like avalanche photodiode, QWIPs and so on.This devices needs sharp heterojunctions. For this purpose we used numerical studies of momentum and mass transport equations. 3D model of mixer was built in COMSOL Multiphysics. Results shows three streams: two peripheral and wide central. The shape and behavior was found independent from studying pressure ranges. That leads to applications of such gas mixer for vertical reactors of MOCVD but not for horizontal reactors.

3D model, MOCVD, MOVPE, horizontal rector, gas mixer, InxGa1-xAs, numerical studying, heterojunctions

1. Rogalski A. Quantum well photoconductors in infrared detector technology // Appl. Phys. R. 2003. V. 93. P. 4355-4391.

2. Zhao J.H, Tang X.H, Mei T., Zhang B.L., Huang G.Sh. MOCVD growth of InGaAsP/InGaAs multi-step-quantum well structure for QWIP application by using TBA and TBP in N2 ambient // J. Crystal Growth. 2004. V. 268. P. 432-436.

3. Nguyen L.D., Brown A.S. [et al.]. 50-nm Self-Aligned-Gate Pseudomorphic AlInAs/GaInAs high electron mobility transistors // IEEE Trans. on Electron Devices. 2007. V. 39. № 9. P. 2007-2013.

4. Diez E., Chen Y.P., Cervero J. M. Two-dimensional electon gas in InGaAs/InAlAs quantum wells // Appl. Phys. Lett. 2006. V. 88. P. 052107-1-052107-3

5. Белявский В.И. Физические основы полупроводниковой нанотехнологии // Соросовский образовательный журнал. 1998. № 10. С. 92-98

6. Официальная страница программного продукта http://www.comsol.com/ (04.04.2014)

7. Зенкевич О. Метод конечных элементов в технике. М.: Мир, 1975. 310 c.

8. Neufeld P.D., Janzen A.R., Aziz R.A. Empirical equations to calculate 16 of the transport collision integrals (l; s) for the Lenndard-Jones (12-6) potential // J. Chem. Physics. 1972. V. 57. P. 1100-1102.

9. Lennard-Jones J.E. On the determination of molecular fields // Proc. Roy. Soc. 1924. V. A106. P. 463-477. Rogalski A. Quantum well photoconductors in infrared detector technology // Appl. Phys. R. 2003. V. 93. P. 4355-4391.

10. Zhao J.H, Tang X.H, Mei T., Zhang B.L., Huang G.Sh. MOCVD growth of InGaAsP/InGaAs multi-step-quantum well structure for QWIP application by using TBA and TBP in N2 ambient // J. Crystal Growth. 2004. V. 268. P. 432-436.

11. Nguyen L.D., Brown A.S. [et al.]. 50-nm Self-Aligned-Gate Pseudomorphic AlInAs/GaInAs high electron mobility transistors // IEEE Trans. on Electron Devices. 2007. V. 39. № 9. P. 2007-2013.

12. Diez E., Chen Y.P., Cervero J. M. Two-dimensional electon gas in InGaAs/InAlAs quantum wells // Appl. Phys. Lett. 2006. V. 88. P. 052107-1-052107-3

13. Белявский В.И. Физические основы полупроводниковой нанотехнологии // Соросовский образовательный журнал. 1998. № 10. С. 92-98

14. Официальная страница программного продукта http://www.comsol.com/ (04.04.2014)

15. Зенкевич О. Метод конечных элементов в технике. М.: Мир, 1975. 310 c.

16. Neufeld P.D., Janzen A.R., Aziz R.A. Empirical equations to calculate 16 of the transport collision integrals (l; s) for the Lenndard-Jones (12-6) potential // J. Chem. Physics. 1972. V. 57. P. 1100-1102.

17. Lennard-Jones J.E. On the determination of molecular fields // Proc. Roy. Soc. 1924. V. A106. P. 463-477.