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| Issue | Title | |
| Vol 8, No 4 (2013) | ETCHING MECHANISM OF CCl4-DOPED GaAs GROWN BY MOCVD | Abstract similar documents |
| Т. А. Bagaev, М. А. Ladugin, А. А. Padalitsa, А. А. Marmalyuk | ||
| "... И зучен процесс травления эпитаксиальных слоев GaAs в процессе легирования тетрахлоридом углерода ..." | ||
| Vol 5, No 5 (2010) | The study of morphology of heteroepytaxial structures on the basis of photosensitive layers CdXHg1-XTe by electron probe analysis methods | Abstract similar documents |
| А. С. Kashuba, A. V. Zablotsky, E. V. Korostylev, A. A. Kuzin, E. V. Permikina, V. V. Arbenina | ||
| "... Data of morphology of epitaxial layers CdXHg1-XTe, which has been grown on substrates GaAs (310 ..." | ||
| Vol 15, No 2 (2020) | Photoalignment and photopatterning: New liquid crystal technology for displays and photonics | Abstract PDF (Eng) PDF (Eng) similar documents |
| V. G. Chigrinov | ||
| 1 - 3 of 3 Items | ||
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