The research of process of CdTe passivation coverings formation on epitaxial layers CdхHg1-хTe for creation of IRphotodetectors.
Abstract
The features of formation passivation coverings of cadmium telluride on epitaxial layers CdхНg1-хТе used for manufacturing of matrix photodetectors of the IR-range are investigated. The laws of process of passivation coverings creation by a method of «the hot wall » are established at unitary and repeated use of CdTe source.
About the Authors
V. V. Arbenina
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation
Russian Federation
T. V. Danilova
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation
Russian Federation
A. S. Kashuba
ФГУП «НПО «Орион»
Russian Federation
Russian Federation
E. V. Permikina
ФГУП «НПО «Орион»
Russian Federation
Russian Federation
References
1. Jong, Hwa Choi. Optical infrared detectors / Hwa Choi Jong, Chul Lee Hee // Semiconductor Science and Technology. – 2002. – Vol. 17. – P. 1456–1561.
2. Таиров, Ю. М.. Технология полупроводниковых и диэлектрических материалов / Ю. М. Таиров, В. Ф. Цветков. – М. : Высшая школа, 1983. – 271 с.
For citation:
Arbenina V.V., Danilova T.V., Kashuba A.S., Permikina E.V. The research of process of CdTe passivation coverings formation on epitaxial layers CdхHg1-хTe for creation of IRphotodetectors. Fine Chemical Technologies. 2007;2(5):51-56. (In Russ.)
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