Fine Chemical Technologies

Advanced search

The composition of anodic oxide films on InAs crystals

Full Text:


The elemental and chemical composition distribution over the indium arsenide anodic oxide films (AOF) thickness created by anodic oxidation in a galvanostatic mode at two current density values in an electrolyte containing fluoride ions are studied by X-ray photoelectron spectroscopy. The received data indicate that AOF consist of the fluoride-oxygen compounds of In and As (In and As oxyfluorides) and indium oxide (In2O3). Fluorine is accumulated near InAs-AOF boundary. Increasing of the current density from 0.05 to 0.5 mA/cm2 at constant value of both forming voltage and electrolyte composition leads to fluorine concentration near AOF-InAs boundary increasing approximately in 3 times. In turn, the forming voltage increasing at fixed current density also increases the fluorine concentration near InAs-AOF boundary but in less extent: with forming voltage increasing on 5 V more the fluorine content in the bulk AOF increases in ~1.2 and ~1.5 times at current densities of 0.05 and 0.5 mA/cm2, respectively. Thus, it is possible to change fluorine content near AOF--InAs boundary at constant fluorine-containing components concentration in initial electrolyte by varying current density and forming voltage of anodic oxidation.

About the Authors

A. V. Artamonov
JSC «Shvabe-Photosystems», Moscow, 117545
Russian Federation

V. P. Astakhov
JSC «Shvabe-Photosystems», Moscow, 117545
Russian Federation

I. B. Varlashov
National Research University «MEI», Moscow, 111250
Russian Federation

N. I. Evstaf’Eva
JSC «Shvabe-Photosystems», Moscow, 117545
Russian Federation

P. V. Mitasov
National Research University «MEI», Moscow, 111250
Russian Federation


1. Астахов В.П., Данилов Ю.А., Дудкин В.Ф., Лесников В.П., Сидорова Г.Ю., Суслов Л.А., Таубкин И.И., Эскин Ю.М. // Письма в ЖТФ. 1992. Т. 18. №. 3. С. 1-5.

2. Давыдов В.Н., Лоскутова Е.А., Фефелова И.И. // Микроэлектроника. 1986. Т. 15. № 5. С. 455-459.

3. Валишева Н.А., Гузев А.А., Ковчавцев А.П., Курышев Г.Л., Левцова Т.А., Панова З.В. // Микроэлектроника. 2009. Т. 38. № 2. С. 99-106.

4. Валишева Н.А., Терещенко О.Е., Просвирин И.П., Калинкин А.В., Голяшов В.А., Левцова Т.А., Бухтияров В.И. // Физика и техника полупроводников. 2011. Т. 46. № 4. С. 569-575.

5. Valisheva N.A., Tereshchenko O.E., Prosvirin I.P., Levtsova T.A., Rodjakina E.E., Kovchavcev A.V. // Appl. Surface Sci. 2010. P. 5722-5726.

6. Urch D.S., Urch M.J.S. ESCA (Mg) - Auger table. London: Chemistry department, Queen Mary College, University of London, 1981. 52 р.

7. Jewett S., Zemlyanov D., Ivanisevic A. // Langmuir. 2011. № 27. P. 3774-3782.

8. Seah M.P., Dench W.A. // Surface & Interface Analysis. 1979. V. 1. № 1. P. 1-11.

9. Moulder J.F., Stickle W.F., Sobol P.E., Bomben K.D. Handbook of X-ray photoelectron spectroscopy. Eden Prairie, MN: Physical Electronics, Inc., 1995. 95 p.

For citation:

Artamonov A.V., Astakhov V.P., Varlashov I.B., Evstaf’Eva N.I., Mitasov P.V. The composition of anodic oxide films on InAs crystals. Fine Chemical Technologies. 2015;10(5):13-18. (In Russ.)

Views: 59

Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.

ISSN 2410-6593 (Print)
ISSN 2686-7575 (Online)