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Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations

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Abstract

The stable, metastable and unstable regions of InGaAs/GaAs heterostructures to the formation of misfit dislocations were determined. The character of the strain distribution in the investigating samples has been estimated and the excess stress change in the quantum wells and barrier layers has been designed

About the Authors

A. A. Maldzhy
M.V. Lomonosov Moscow University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation


R. Kh. Akchurin
M.V. Lomonosov Moscow University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation


A. A. Marmalyuk
ООО «Сигма Плюс»
Russian Federation


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For citation:


Maldzhy A.A., Akchurin R.K., Marmalyuk A.A. Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations. Fine Chemical Technologies. 2006;1(6):73-77. (In Russ.)

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