Pulsed photon annealing of Ве⁺-implanted InSb layers

The effect of Be-implanted InSb layers annealing by pulsed halogen lamps radiation on the thermo-emf was investigated. The features of the stagewise annealing influence, as well as the optimal temperature and duration of each stage were studied. The results are discussed on the basis of modern ideas of the possible mechanisms of radiation defects formation and transformation.

implantation, pulsed annealing, InSb, defects

1. Стоянова И.Г., Скакун Н.А., Трохин А.С. Локализация атомов бериллия в кристаллической решетке антимонида индия при ионной имплантации // Поверхность: Физика, химия, механика. 1988. № 8. С. 144-146.

2. Вавилов В.С., Кив А.Е., Ниязова О.Р. Механизмы образования и миграции дефектов в полупроводниках. - М.: Наука, 1981. С. 30.

3. Fujisawa Isao. Type conversion of InSb from p to n by ion bombardment and laser irradiation // Jpn. J. Appl. Phys. 1980. V. 19. № 11. P. 2137-2141.

4. Шалимова К.В. Физика полупроводников. - М.: Энергия, 1976. С. 196-198.

5. Vaidya N., Huang H., Liang D. Grown-in defects of InSb crystals: Models and computation / Dep. of Mathematics & Statistics, York University. - Toronto, Canada M3J 1P3, 2005. P. 9.

6. Höglund A. Electronic structure calculations of point defects in semiconductors / Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology 316. - Uppsala, Sweden, 2007. P. 102.

7. Declemya A., Sauvageb T., Kotaic E., Levequed P., Abd El-Atie M.I. Be- and Mg-ion implantation-induced damage in InSb // Materials Science in Semiconductor Processing. 2001. V. 4. № 1-3. P. 277-279.

8. Матаре Г. Электроника дефектов в полупроводниках. - М.: Мир, 1974. 462 c. 1.