ETCHING MECHANISM OF CCl 4 -DOPED GaAs GROWN BY MOCVD

Т. А. Bagaev; М. А. Ladugin; А. А. Padalitsa; А. А. Marmalyuk

Fine Chemical Technologies
Tonkie Khimicheskie Tekhnologii

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ISSN 2686-7575 (Online)

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Bagaev Т.А., Ladugin М.А., Padalitsa А.А., Marmalyuk А.А. ETCHING MECHANISM OF CCl₄-DOPED GaAs GROWN BY MOCVD. Fine Chemical Technologies. 2013;8(4):77-79. (In Russ.)

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ISSN 2410-6593 (Print)
ISSN 2686-7575 (Online)

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