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Specific features of electrochemical polishing etch of single crystal silicon in a non-oxidizing etching agent

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Abstract

Specific features of the electrochemical etching of single crystal n- and p-type silicon in a non-oxidizing etching reagent (< 12 vol. % of HF) were studied. Pulsation of voltage-time dependence of etching was found. The obtained results are explained by the formation of a loose high-resistance layer of complex fluorides and silicon oxides on the surface of the silicon substrate, as well as by differences in the nature of n- and p-type silicon etching.

About the Authors

E. A. Shelonin
МИТХТ им. М.В. Ломоносова
Russian Federation


A. M. Kort
МИТХТ им. М.В. Ломоносова
Russian Federation


A. G. Yakovenko
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation


A. A. Gvelesiani
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation


E. N. Abramova
M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571
Russian Federation


References

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For citation:


Shelonin E.A., Kort A.M., Yakovenko A.G., Gvelesiani A.A., Abramova E.N. Specific features of electrochemical polishing etch of single crystal silicon in a non-oxidizing etching agent. Fine Chemical Technologies. 2012;7(4):84-87. (In Russ.)

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ISSN 2410-6593 (Print)
ISSN 2686-7575 (Online)