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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">chemicallytech</journal-id><journal-title-group><journal-title xml:lang="en">Fine Chemical Technologies</journal-title><trans-title-group xml:lang="ru"><trans-title>Тонкие химические технологии</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2410-6593</issn><issn pub-type="epub">2686-7575</issn><publisher><publisher-name>MIREA – Russian Technological University (RTU MIREA).</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">chemicallytech-1343</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>CHEMISTRY AND TECHNOLOGY OF INORGANIC MATERIALS</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ХИМИЯ И ТЕХНОЛОГИЯ НЕОРГАНИЧЕСКИХ МАТЕРИАЛОВ</subject></subj-group></article-categories><title-group><article-title>The research of process of CdTe passivation coverings formation on epitaxial layers CdхHg1-хTe for creation of IRphotodetectors.</article-title><trans-title-group xml:lang="ru"><trans-title>Исследование процесса нанесения пассивирующих покрытий CdTe на эпитаксиальные слои CdхHg1-хТe для создания фотоприемников ИК-диапазона</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Арбенина</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Arbenina</surname><given-names>V. V.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Данилова</surname><given-names>Т. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Danilova</surname><given-names>T. V.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кашуба</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Kashuba</surname><given-names>A. S.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Пермикина</surname><given-names>Е. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Permikina</surname><given-names>E. V.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>МИТХТ им. М.В. Ломоносова, 119571, Москва, пр-т Вернадского, д. 86</institution><country>Россия</country></aff><aff xml:lang="en"><institution>M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571</institution><country>Russian Federation</country></aff></aff-alternatives><aff xml:lang="ru" id="aff-2"><institution>ФГУП «НПО «Орион»</institution><country>Russian Federation</country></aff><pub-date pub-type="collection"><year>2007</year></pub-date><pub-date pub-type="epub"><day>28</day><month>10</month><year>2007</year></pub-date><volume>2</volume><issue>5</issue><fpage>51</fpage><lpage>56</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Arbenina V.V., Danilova T.V., Kashuba A.S., Permikina E.V., 2007</copyright-statement><copyright-year>2007</copyright-year><copyright-holder xml:lang="ru">Арбенина В.В., Данилова Т.В., Кашуба А.С., Пермикина Е.В.</copyright-holder><copyright-holder xml:lang="en">Arbenina V.V., Danilova T.V., Kashuba A.S., Permikina E.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.finechem-mirea.ru/jour/article/view/1343">https://www.finechem-mirea.ru/jour/article/view/1343</self-uri><abstract><p>The features of formation passivation coverings of cadmium telluride on epitaxial layers CdхНg1-хТе used for manufacturing of matrix photodetectors of the IR-range are investigated. The laws of process of passivation coverings creation by a method of «the hot wall » are established at unitary and repeated use of CdTe source.</p></abstract><trans-abstract xml:lang="ru"><p>сследованы особенности формирования пассивирующих покрытий теллурида кадмия на эпитаксиальных слоях CdхНg1-хТе, применяемых для изготовления матричных фотоприемников ИК-диапазона. Установлены закономерности процесса нанесения пассивирующих покрытий методом «горячей стенки» при однократном и многократном использовании источника CdTe.</p></trans-abstract></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Jong, Hwa Choi. Optical infrared detectors / Hwa Choi Jong, Chul Lee Hee // Semiconductor Science and Technology. – 2002. – Vol. 17. – P. 1456–1561.</mixed-citation><mixed-citation xml:lang="en">Jong, Hwa Choi. 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