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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="en"><front><journal-meta><journal-id journal-id-type="publisher-id">chemicallytech</journal-id><journal-title-group><journal-title xml:lang="en">Fine Chemical Technologies</journal-title><trans-title-group xml:lang="ru"><trans-title>Тонкие химические технологии</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2410-6593</issn><issn pub-type="epub">2686-7575</issn><publisher><publisher-name>MIREA – Russian Technological University (RTU MIREA).</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">chemicallytech-990</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>MATHEMATICAL METHODS AND INFORMATION SYSTEMS IN CHEMICAL TECHNOLOGY</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>МАТЕМАТИЧЕСКИЕ МЕТОДЫ И ИНФОРМАЦИОННЫЕ СИСТЕМЫ В ХИМИЧЕСКОЙ ТЕХНОЛОГИИ</subject></subj-group></article-categories><title-group><article-title>Model of vertical crystal growth of Cd(1-x)ZnxTe single-crystals</article-title><trans-title-group xml:lang="ru"><trans-title>Модель процесса вертикальной направленной кристаллизации монокристаллов Cd(1-x)ZnxTe</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гвелесиани</surname><given-names>Л. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Gvelesiani</surname><given-names>L. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>кафедра Материалов микро-, опто- и наноэлектроники, аспирант</p></bio><email xlink:type="simple">lgvelisiani@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>МИТХТ им. М.В. Ломоносова, 119571, Москва, пр-т Вернадского, д. 86</institution><country>Россия</country></aff><aff xml:lang="en"><institution>M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2010</year></pub-date><pub-date pub-type="epub"><day>28</day><month>04</month><year>2010</year></pub-date><volume>5</volume><issue>2</issue><fpage>18</fpage><lpage>22</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Gvelesiani L.A., 2010</copyright-statement><copyright-year>2010</copyright-year><copyright-holder xml:lang="ru">Гвелесиани Л.А.</copyright-holder><copyright-holder xml:lang="en">Gvelesiani L.A.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.finechem-mirea.ru/jour/article/view/990">https://www.finechem-mirea.ru/jour/article/view/990</self-uri><abstract/><trans-abstract xml:lang="ru"/><kwd-group xml:lang="ru"><kwd>твердые растворы CdZnTe</kwd><kwd>вертикальная направленная кристаллизация</kwd><kwd>радиационный теплообмен</kwd><kwd>угловой коэффициент</kwd></kwd-group><kwd-group xml:lang="en"><kwd>solid solutions</kwd><kwd>CdZnTe</kwd><kwd>vertical crystal growth</kwd><kwd>radiative heat transfer</kwd><kwd>view factor</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Возможное применение спектрометров гамма-излучения на основе CdZnTe-детекторов / А. В. Бушуев [и др.] // Атомная энергия. - 2002. - Т. 92, вып. 5. - С. 371-375.</mixed-citation><mixed-citation xml:lang="en">Возможное применение спектрометров гамма-излучения на основе CdZnTe-детекторов / А. В. Бушуев [и др.] // Атомная энергия. - 2002. - Т. 92, вып. 5. - С. 371-375.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Eisen, Y. CdTe and CdZnTe materials for room-temperature X-ray and gamma ray detectors / Y. Eisen, A. Shor // Journal of Crystal Growth. - 1998. - Vol. 184-185. - P. 1302-1312.</mixed-citation><mixed-citation xml:lang="en">Eisen, Y. CdTe and CdZnTe materials for room-temperature X-ray and gamma ray detectors / Y. Eisen, A. Shor // Journal of Crystal Growth. - 1998. - Vol. 184-185. - P. 1302-1312.</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">Kuppurao, S. Designing thermal environments to promote convex interface shapes during the vertical Bridgman growth of cadmium zinc telluride / S. Kuppurao, J.J. Derby // Journal of Crystal Growth. - 1995. - Vol. 155, issues 1-2. - P. 93-102.</mixed-citation><mixed-citation xml:lang="en">Kuppurao, S. Designing thermal environments to promote convex interface shapes during the vertical Bridgman growth of cadmium zinc telluride / S. Kuppurao, J.J. Derby // Journal of Crystal Growth. - 1995. - Vol. 155, issues 1-2. - P. 93-102.</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">Kuppurao, S. Modeling the vertical Bridgman growth of cadmium zinc telluride. I. Quasi-steady analysis of heat transfer and convection / S. Kuppurao, S. Brandon, J.J. Derby // Journal of Crystal Growth. - 1997. - Vol. 155, issues 3-4. - P. 350-360.</mixed-citation><mixed-citation xml:lang="en">Kuppurao, S. Modeling the vertical Bridgman growth of cadmium zinc telluride. I. Quasi-steady analysis of heat transfer and convection / S. Kuppurao, S. Brandon, J.J. Derby // Journal of Crystal Growth. - 1997. - Vol. 155, issues 3-4. - P. 350-360.</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">Numerical methods for industrial vertical Bridgman growth of (Cd,Zn)Te / K. Lin [et al.] // Journal of Crystal Growth. - 2002. - Vol. 237-239, part 3. - P. 1736-1740.</mixed-citation><mixed-citation xml:lang="en">Numerical methods for industrial vertical Bridgman growth of (Cd,Zn)Te / K. Lin [et al.] // Journal of Crystal Growth. - 2002. - Vol. 237-239, part 3. - P. 1736-1740.</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">Effect of steady crucible rotation on segregation in high-pressure vertical Bridgman growth of cadmium zinc telluride / A. Yeckel [et al.] // Journal of Crystal Growth. - 1999. - Vol. 203, issues 1-2. - P. 87-102.</mixed-citation><mixed-citation xml:lang="en">Effect of steady crucible rotation on segregation in high-pressure vertical Bridgman growth of cadmium zinc telluride / A. Yeckel [et al.] // Journal of Crystal Growth. - 1999. - Vol. 203, issues 1-2. - P. 87-102.</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">Твердые растворы Cd1-xZnxTe - материал для подложек эпитаксиальных структур Hg1-xCdxTe / . Н. И. Шматов [и др.] // Материалы электронной техники. - 2006. - № 3. - С. 28-32.</mixed-citation><mixed-citation xml:lang="en">Твердые растворы Cd1-xZnxTe - материал для подложек эпитаксиальных структур Hg1-xCdxTe / . Н. И. Шматов [и др.] // Материалы электронной техники. - 2006. - № 3. - С. 28-32.</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">Investigation of artificial forced cooling in the Bridgman crystal growth of cadmium zinc telluride / J. Liu [et al.] // Journal of Electronic Materials. - 2007. - Vol. 36, № 8. - P. 971-980.</mixed-citation><mixed-citation xml:lang="en">Investigation of artificial forced cooling in the Bridgman crystal growth of cadmium zinc telluride / J. Liu [et al.] // Journal of Electronic Materials. - 2007. - Vol. 36, № 8. - P. 971-980.</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">Марченко, М. П. Численное исследование влияния внешних температурных полей на форму границы раздела фаз в процессе выращивания монокристаллов методом вертикальной направленной кристаллизации / М. П. Марченко, А. С. Сенченков // Математическое моделирование. - 1992. - Т. 4, № 4. - С. 35-43.</mixed-citation><mixed-citation xml:lang="en">Марченко, М. П. Численное исследование влияния внешних температурных полей на форму границы раздела фаз в процессе выращивания монокристаллов методом вертикальной направленной кристаллизации / М. П. Марченко, А. С. Сенченков // Математическое моделирование. - 1992. - Т. 4, № 4. - С. 35-43.</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">Reed, M. D. Computational modeling of heat transport in a multi-zone high-pressure vertical electro-dynamic gradient CdZnTe furnace / M. D. Reed, Cs. Szeles, S. E. Cameron // Journal of Crystal Growth. - 2006. - Vol. 289, issue 2. - P. 494-501.</mixed-citation><mixed-citation xml:lang="en">Reed, M. D. Computational modeling of heat transport in a multi-zone high-pressure vertical electro-dynamic gradient CdZnTe furnace / M. D. Reed, Cs. Szeles, S. E. Cameron // Journal of Crystal Growth. - 2006. - Vol. 289, issue 2. - P. 494-501.</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">Liu, X. Numerical analysis of Cd1−xZnxTe crystal growth by the vertical Bridgman method using the accelerated crucible rotation technique / X. Liu, W. Jie, Y. Zhou // Journal of Crystal Growth. - 2000. - Vol. 219, issues 1-2. - P. 22-31.</mixed-citation><mixed-citation xml:lang="en">Liu, X. Numerical analysis of Cd1−xZnxTe crystal growth by the vertical Bridgman method using the accelerated crucible rotation technique / X. Liu, W. Jie, Y. Zhou // Journal of Crystal Growth. - 2000. - Vol. 219, issues 1-2. - P. 22-31.</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">Numeric simulation of vertical Bridgman growth of Cd1-xZnxTe melts / V. M. Lakeenkov [et al.] // Journal of Crystal Growth. - 1999. - Vol. 197. - P. 443-448.</mixed-citation><mixed-citation xml:lang="en">Numeric simulation of vertical Bridgman growth of Cd1-xZnxTe melts / V. M. Lakeenkov [et al.] // Journal of Crystal Growth. - 1999. - Vol. 197. - P. 443-448.</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">Martinez-Tomas, C. CdTe crystal growth process by the Bridgman method: numerical simulation / C. Martinez-Tomas, V. Munoz // Journal of Crystal Growth. - 2001. - Vol. 222, issue 3. - P. 435-451.</mixed-citation><mixed-citation xml:lang="en">Martinez-Tomas, C. CdTe crystal growth process by the Bridgman method: numerical simulation / C. Martinez-Tomas, V. Munoz // Journal of Crystal Growth. - 2001. - Vol. 222, issue 3. - P. 435-451.</mixed-citation></citation-alternatives></ref><ref id="cit14"><label>14</label><citation-alternatives><mixed-citation xml:lang="ru">Martinez-Tomas, C. Heat transfer simulation in a vertical Bridgman CdTe growth configuration / C. Martinez-Tomas, V. Munoz, R. Triboulet // Journal of Crystal Growth. - 1999. - Vol. 197, issue 3. - P. 435-442.</mixed-citation><mixed-citation xml:lang="en">Martinez-Tomas, C. Heat transfer simulation in a vertical Bridgman CdTe growth configuration / C. Martinez-Tomas, V. Munoz, R. Triboulet // Journal of Crystal Growth. - 1999. - Vol. 197, issue 3. - P. 435-442.</mixed-citation></citation-alternatives></ref><ref id="cit15"><label>15</label><citation-alternatives><mixed-citation xml:lang="ru">Расчет термонапряженного состояния и взаимодействия собственных точечных дефектов в бездислокационных монокристаллах кремния / Н. А. Верезуб [и др.] // Материалы электронной техники - 2001. - № 2. - С. 52-57.</mixed-citation><mixed-citation xml:lang="en">Расчет термонапряженного состояния и взаимодействия собственных точечных дефектов в бездислокационных монокристаллах кремния / Н. А. Верезуб [и др.] // Материалы электронной техники - 2001. - № 2. - С. 52-57.</mixed-citation></citation-alternatives></ref><ref id="cit16"><label>16</label><citation-alternatives><mixed-citation xml:lang="ru">Верезуб, Н.А. Влияние «тигельного» экрана на тепловое поле и распределение ростовых микродефектов в монокристаллах кремния диаметром 200мм / Н. А. Верезуб, М. Г. Мильвидский, А. И. Простомолотов // Материаловедение и технология. Полупроводники. - 2004. - С. 17-21.</mixed-citation><mixed-citation xml:lang="en">Верезуб, Н.А. Влияние «тигельного» экрана на тепловое поле и распределение ростовых микродефектов в монокристаллах кремния диаметром 200мм / Н. А. Верезуб, М. Г. Мильвидский, А. И. Простомолотов // Материаловедение и технология. Полупроводники. - 2004. - С. 17-21.</mixed-citation></citation-alternatives></ref><ref id="cit17"><label>17</label><citation-alternatives><mixed-citation xml:lang="ru">Edwards, K. Understanding horizontal Bridgman shelf growth of cadmium telluride and cadmium zinc telluride. II Thermoelastic stresses / K. Edwards, J.J. Derby // Journal of Crystal Growth. - 1997. - Vol. 197, issues 1-2. - P. 133-143.</mixed-citation><mixed-citation xml:lang="en">Edwards, K. Understanding horizontal Bridgman shelf growth of cadmium telluride and cadmium zinc telluride. II Thermoelastic stresses / K. Edwards, J.J. Derby // Journal of Crystal Growth. - 1997. - Vol. 197, issues 1-2. - P. 133-143.</mixed-citation></citation-alternatives></ref><ref id="cit18"><label>18</label><citation-alternatives><mixed-citation xml:lang="ru">Марченко, М. П. Краевые условия теплообмена излучением в процессах выращивания монокристаллов в ампулах. Ч. 1. Непрозрачная ампула / М. П. Марченко, И. В. Фрязинов // Журнал вычислительной математики и математической физики. - 1997. - T. 37, № 9. - С. 1143-1152.</mixed-citation><mixed-citation xml:lang="en">Марченко, М. П. Краевые условия теплообмена излучением в процессах выращивания монокристаллов в ампулах. Ч. 1. Непрозрачная ампула / М. П. Марченко, И. В. Фрязинов // Журнал вычислительной математики и математической физики. - 1997. - T. 37, № 9. - С. 1143-1152.</mixed-citation></citation-alternatives></ref><ref id="cit19"><label>19</label><citation-alternatives><mixed-citation xml:lang="ru">Зигель, Р. Теплообмен излучением / Р. Зигель, Дж. Хауэлл : под ред. Б. А. Хрусталева. - М. : Мир, 1975. - 934 с.</mixed-citation><mixed-citation xml:lang="en">Зигель, Р. Теплообмен излучением / Р. Зигель, Дж. Хауэлл : под ред. Б. А. Хрусталева. - М. : Мир, 1975. - 934 с.</mixed-citation></citation-alternatives></ref><ref id="cit20"><label>20</label><citation-alternatives><mixed-citation xml:lang="ru">Global modeling of heat transfer in crystal growth furnaces / F. Dupret [et al.] // International Journal of Heat Mass Transfer. - 1990. - Vol. 33, № 9. - P. 1849-1871.</mixed-citation><mixed-citation xml:lang="en">Global modeling of heat transfer in crystal growth furnaces / F. Dupret [et al.] // International Journal of Heat Mass Transfer. - 1990. - Vol. 33, № 9. - P. 1849-1871.</mixed-citation></citation-alternatives></ref><ref id="cit21"><label>21</label><citation-alternatives><mixed-citation xml:lang="ru">Greenberg, J. H. Vapor pressure scanning implications of CdTe crystal growth / J. H. Greenberg // Journal of Crystal Growth. - 1999. - Vol. 197. - P. 406-412.</mixed-citation><mixed-citation xml:lang="en">Greenberg, J. H. Vapor pressure scanning implications of CdTe crystal growth / J. H. Greenberg // Journal of Crystal Growth. - 1999. - Vol. 197. - P. 406-412.</mixed-citation></citation-alternatives></ref><ref id="cit22"><label>22</label><citation-alternatives><mixed-citation xml:lang="ru">Vapour pressure investigation of CdZnTe / V. N. Guskov [et al.] // Journal of alloys and compounds. - 2004. - Vol. 371, issues 1-2. - P. 118-121.</mixed-citation><mixed-citation xml:lang="en">Vapour pressure investigation of CdZnTe / V. N. Guskov [et al.] // Journal of alloys and compounds. - 2004. - Vol. 371, issues 1-2. - P. 118-121.</mixed-citation></citation-alternatives></ref><ref id="cit23"><label>23</label><citation-alternatives><mixed-citation xml:lang="ru">Nipan, G. D. P-T-X-Y phase diagram of the CdZnTe system / G. D. Nipan // Journal of alloys and compounds. - 2004. - Vol. 371, issues 1-2. - P. 160-163.</mixed-citation><mixed-citation xml:lang="en">Nipan, G. D. P-T-X-Y phase diagram of the CdZnTe system / G. D. Nipan // Journal of alloys and compounds. - 2004. - Vol. 371, issues 1-2. - P. 160-163.</mixed-citation></citation-alternatives></ref><ref id="cit24"><label>24</label><citation-alternatives><mixed-citation xml:lang="ru">Glazov, V. M. Volumetric effects of ZnTe, CdTe and HgTe compounds at melting and subsequent heating / V. M. Glazov, L. M. Pavlova // Scandinavian Journal of Metallurgy. - 2001. - Vol. 30. - P. 379-387.</mixed-citation><mixed-citation xml:lang="en">Glazov, V. M. Volumetric effects of ZnTe, CdTe and HgTe compounds at melting and subsequent heating / V. M. Glazov, L. M. Pavlova // Scandinavian Journal of Metallurgy. - 2001. - Vol. 30. - P. 379-387.</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
