chemicallytechFine Chemical TechnologiesТонкие химические технологии2410-65932686-7575MIREA – Russian Technological University (RTU MIREA).chemicallytech-576Research ArticleCHEMISTRY AND TECHNOLOGY OF INORGANIC MATERIALSХИМИЯ И ТЕХНОЛОГИЯ НЕОРГАНИЧЕСКИХ МАТЕРИАЛОВCALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS InXGa1-XAs ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTORРАСЧЕТ СКОРОСТИ РОСТА И СОСТАВА НАНОСЛОЕВ InXGa1-XAs НА ПОДЛОЖКЕ InP С ПОМОЩЬЮ 3D-МОДЕЛИ ГОРИЗОНТАЛЬНОГО РЕАКТОРА МОС-ГИДРИДНОЙ ЭПИТАКСИИГорскийА. А.GorskiyA. A.

кафедра Материалов микро-, опто- и наноэлектроники, аспирант

andrey.gorskiy@list.ruБерлинерЛ. Б.BerlinerL. B.

кафедра Материалов микро-, опто- и наноэлектроники, ведущий научный сотрудник

noemail@neicon.ruТитоваЕ. В.TitovaE. V.

кафедра Материалов микро-, опто- и наноэлектроники, магистр

noemail@neicon.ruМИТХТ им. М.В. Ломоносова, 119571, Москва, пр-т Вернадского, д. 86РоссияM.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571Russian Federation201328082013848591Copyright © Gorskiy A.A., Berliner L.B., Titova E.V., 20132013Горский А.А., Берлинер Л.Б., Титова Е.В.Gorskiy A.A., Berliner L.B., Titova E.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.finechem-mirea.ru/jour/article/view/576

A three-dimensional (3D) detailed heat, mass and momentum transfer model was constructed to describe the thermal behavior, fluid dynamics and the diffusion in a horizontal metal-organic vapor-phase epitaxy (MOVPE) reactor with a rectangular section and a rotated substrate keeper with inductive heating used for numerical studying to obtain optimum conditions for the growth process and to calculate the growth rate and the composition of In<sub>x</sub>Ga<sub>1-x</sub>As nanolayers.

П остроена расчетная модель процесса выращивания эпитаксиальных изопериодических нанослоев гетероструктуры In1-xGaxAs на подложках InP в горизонтальном реакторе МОС-гидридной эпитаксии прямоугольного сечения с вращающимся подложкодержателем и индукционным нагревом. Установлена зависимость однородности состава и толщины нанослоев от скорости вращения подложкодержателя и смещения индуктора в двух направлениях: над реактором и вдоль газового потока.

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The authors declare that there are no conflicts of interest present.