chemicallytechFine Chemical TechnologiesТонкие химические технологии2410-65932686-7575MIREA – Russian Technological University (RTU MIREA).10.32362/2410-6593-2025-20-4-324-343KEDCJHchemicallytech-2276Research ArticleCHEMISTRY AND TECHNOLOGY OF INORGANIC MATERIALSХИМИЯ И ТЕХНОЛОГИЯ НЕОРГАНИЧЕСКИХ МАТЕРИАЛОВAluminum oxynitrides doped with rare-earth and transition metal ionsОксинитриды алюминия, легированные ионами редкоземельных и переходных металловhttps://orcid.org/0000-0002-5662-1223АхмадуллинаН. С.AkhmadullinaNailya S.

Ахмадуллина Наиля Сайфулловна, к.х.н., старший научный сотрудник, лаборатория физико-химического анализа керамических материалов

119991, Москва, Ленинский пр., д. 49

Scopus Author ID 26432528700

ResearcherID M-7540-2018

Nailya S. Akhmadullina, Cand. Sci. (Chem.), Senior Researcher, Laboratory of Physical and Chemical Analysis of the Ceramic Materials

Scopus Author ID 26432528700

ResearcherID M-7540-2018

49, Leninskii pr., Moscow, 119991

nakhmadullina@mail.ruhttps://orcid.org/0000-0002-9883-6652ИщенкоА. В.IshchenkoAleksey V.

Ищенко Алексей Владимирович, к.ф.-м.н., доцент, старший научный сотрудник, кафедра экспериментальной физики

620062, Екатеринбург, пр. Мира, д. 19

Scopus Author ID 57195266830

 

Alexey V. Ishchenko, Cand. Sci. (Phys.-Math.), Associate Professor, Senior Researcher, Department of Experimental Physics

Scopus Author ID 57195266830

19, Mira pr., Yekaterinburg, 620062

 

a-v-i@mail.ruИнститут металлургии и материаловедения им. А.А. Байкова, Российская академия наукРоссияA.A. Baikov Institute of Metallurgy and Material Science, Russian Academy of SciencesRussian FederationУральский федеральный университет им. первого Президента России Б.Н. ЕльцинаРоссияUral Federal UniversityRussian Federation202502092025204324343Copyright © Akhmadullina N.S., Ishchenko A.V., 20252025Ахмадуллина Н.С., Ищенко А.В.Akhmadullina N.S., Ishchenko A.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.finechem-mirea.ru/jour/article/view/2276Objectives

Objectives. The work set out to summarize the results of the studies of aluminum oxynitrides (AlONs) doped with rare earth (REM) and transition metals (TM) and to highlight the main effects of REM and TM dopants on the formation, phase composition, and optical properties of the AlON.

Results

Results. The presented analysis of the literature data includes the results of our own studies of the AlON doped with REM and TM ions. The influence of REM and TM additives on the formation of AlON and its phase com position, as well as optical properties, was considered.

Conclusions

Conclusions. It is clearly shown that the doping with REM and TM ions enhances the formation of pure AlON phase via high-temperature synthesis from oxide and nitride. The oxynitride matrix exhibits reducing properties with respect to both REM and TM. Doping with the REM ions leads to the emergence of luminescent properties in the visible range, while doping with TM ions affects the band gap in AlON as a semiconductor. The solubility limits of all metals in the AlON matrix do not exceed 1–2 at. % vs Al. Concentration quenching of luminescence is observed at REM contents from 0.1 to 0.5 at. %.

Цели

Цели. Обобщить результаты исследований и сформулировать основные закономерности влияния ионов редкоземельных (РЗМ) и переходных металлов (ПМ) на формирование, фазовый состав и оптические свойства оксинитрида алюминия (алона).

Результаты

Результаты. Проведен анализ литературных данных, включая результаты собственных исследований авторов, касающихся алонов, легированных ионами РЗМ и ПМ. Рассмотрено влияние добавок РЗМ и ПМ на формирование алона и его фазовый состав и оптические свойства.

Выводы

Выводы. Установлено, что введение ионов РЗМ и ПМ способствует образованию фазы алона при высокотемпературном синтезе из оксида и нитрида алюминия. Оксинитридная матрица проявляет восстановительные свойства как в отношении РЗМ, так и ПМ. Легирование ионами РЗМ приводит к получению материалов, обладающих люминесцентными свойствами в видимом диапазоне. Легирование ионами ПМ влияет на ширину запрещенной зоны алона как полупроводника. Пределы растворимости всех металлов в матрице алона не превышают 1–2 ат. % относительно алюминия. Концентрационное тушение люминесценции наблюдается при содержании РЗМ от 0.1 до 0.5 ат. %.

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The authors declare that there are no conflicts of interest present.