chemicallytechFine Chemical TechnologiesТонкие химические технологии2410-65932686-7575MIREA – Russian Technological University (RTU MIREA).10.32362/2410-6593-2019-14-3-78-89chemicallytech-1275Research ArticleCHEMISTRY AND TECHNOLOGY OF INORGANIC MATERIALSХИМИЯ И ТЕХНОЛОГИЯ НЕОРГАНИЧЕСКИХ МАТЕРИАЛОВPreparation, Structural and Electrophysical Studies of Ferroelectric Ceramic Samples of the System (1-2x)BiScO3-xPbTiO3-xPbMg1/3Nb2/3O3, 0 ≤ x ≤ 0.50Получение, структурные и электрофизические исследования сегнетокерамических образцов системы (1-2x)BiScO3-xPbTiO3-xPbMg1/3Nb2/3O3, 0 ≤ x ≤ 0.50https://orcid.org/0000-0002-1610-7166СпицинА. И.SpitsinA. I.

Спицин Александр Игоревич - аспирант кафедры наноэлектроники.

119454, Москва, пр-т Вернадского, д. 78

Scopus Author ID 57192374461

Alexander I. Spitsin - Postgraduate Student, Chair of Nanoelectronics.

78, Vernadskogo pr., Moscow 119454

Scopus Author ID 57192374461

https://orcid.org/0000-0003-3990-9847БушА. А.BushA. A.

Буш Александр Андреевич - доктор технических наук, профессор, директор НИИ материалов твердотельной электроники.

119454, Москва, пр-т Вернадского, д. 78

Scopus Author ID 7201882802, ResearcherlD R-2287-2016

Alexander A. Bush - D.Sc. (Engineering), Professor, Director.

78, Vernadskogo pr., Moscow 119454

Scopus Author ID 7201882802, ResearcherID R-2287-2016

aabush@yandex.ruhttps://orcid.org/0000-0002-1763-0012КаменцевК. Е.KamentsevK. E.

Каменцев Константин Евгеньевич - кандидат технических наук, начальник отдела НИИ материалов твердотельной электроники.

119454, Москва, пр-т Вернадского, д. 78

Scopus Author ID 6603274897, ResearcherlD C-3853-2017

Konstantin E. Kamentsev - Ph.D. (Engineering), Head of Department.

78, Vernadskogo pr., Moscow 119454

Scopus Author ID 6603274897, ResearcherID C-3853-2017

https://orcid.org/0000-0002-5749-7164СиротинкинВ. П.SirotinkinV. P.

Сиротинкин Владимир Петрович - кандидат химических наук, старший научный сотрудник.

119334, Москва, Ленинский проспект, д. 49

Vladimir P. Sirotinkin - Ph.D. (Chemistry), Senior Researcher.

49, Leninsky prospect, Moscow, 119334

Scopus Author ID 6603120490, https://orcid.org/0000-0002-5749-7164

https://orcid.org/0000-0002-5416-9579ТалановМ. В.TalanovM. V.

Таланов Михаил Валерьевич - кандидат физико-математических наук, научный сотрудник.

344090, Ростов-на-Дону, проспект Стачки, д. 194

Scopus Author ID 53164920700, ResearcherID E-6006-2014

Mikhail V. Talanov - Ph.D. (Physics and Mathematics).

194, prospect Stachki, Rostov-on-Don, 344090

Scopus Author ID 53164920700, ResearcherID E-6006-2014

МИРЭА - Российский технологический университетРоссияMIREA - Russian Technological UniversityRussian FederationИнститут металлургии и материаловедения им. А.А. Байкова, Российская академия наукРоссияA.A. Baikov Institute of Metallurgy and Materials Science, RASRussian FederationЮжный федеральный университет, НИИ физикиРоссияSouthern Federal University, Research Institute of PhysicsRussian Federation2019120720191437889Copyright © Spitsin A.I., Bush A.A., Kamentsev K.E., Sirotinkin V.P., Talanov M.V., 20192019Спицин А.И., Буш А.А., Каменцев К.Е., Сиротинкин В.П., Таланов М.В.Spitsin A.I., Bush A.A., Kamentsev K.E., Sirotinkin V.P., Talanov M.V.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.finechem-mirea.ru/jour/article/view/1275

Ceramic samples of the (1-2x)BiScO3-xPbTiO3-xPbMg1/3Nb2/3O3 system in the whole compositions region x = 0-0.50 were synthesized. According to the X-ray diffraction studies (XRD), the region of solid solutions with perovskite structure formation in the system was determined (x = 0.23-0.50). The presence of a morphotropic phase boundary between tetragonal and rhombohedral forms of solid solutions was established at x = 0.40-0.42. Refined XRD with profile peak analysis established the presence of the additional cubic phase with broadened X-ray reflexes in the solid solutions along with the main phase. It was concluded that the main and additional phases are located in the volume and in the surface layer of ceramic crystallites, respectively. The crystal structures of phases in the polarized and depolarized sample with x = 0.42 were determined by the Rietveld method. It was found that the monoclinic perovskite phase is present in the polarized sample. Temperature-frequency dependences of dielectric permittivity and losses of solid solutions were studied. It was found that the increasing content of BiScO3 in samples causes a change in their dielectric properties from the usual ferroelectric (FE) in the region (1-2x) = 0-0.08 to ferroelectric-relaxor (FE-R) in the region (1-2x) = 0.08-0.40, and then to the properties of dipole glass with weak correlations in the region (1-2x) > 0.40. It was found that the samples with x = 0.434 and 0.446 below Tc = 414 and 445 K spontaneously pass to the FE state. In the samples with x = 0.42 the application of an electric field of 2.0 kV/ cm induces a transition from FE-R to FE state with Tc = 350 K, which remains after the field is removed.

Синтезированы керамические образцы системы (1-2x)BiScO3-xPbTiO3-xPbMg1/3Nb2/3O3, во всей области ее составов х = 0-0.50. По данным рентгенофазового анализа (РФА) определена область образования в системе твердых растворов со структурой перовскита (х = 0.23-0.50), установлено наличие в ней морфотропной фазовой границы между тетрагональной и ромбоэдрической формами твердыхрастворов при х = 0.40-0.42. Проведенный нами РФА с про-фильным анализом пиков показал наличие в твердых растворах, наряду с основной фазой, дополнительной кубической фазы, дающей размытые рентгеновские рефлексы. Сделано заключение о том, что основная и дополнительная фазы сосредоточены, соответственно, в о^еме и в поверхностном слое кристаллитов керамики. Методом Ритвельда определены кристаллические структуры фаз в поляризованном и деполяризованном образце с х = 0.42, найдено наличие в поляризованном образце перовскитной фазы моноклинной симметрии. Изучены температурно-частотные зависимости диэлектрических проницаемости е и потерь tg6 твердых растворов и установлено, что рост содержания BiScO3 вызывает изменение их диэлектрических свойств от обычных сегнетоэлектрических (СЭ) в области (1-2х) = 0-0.08 до сегнетоэлектрических-релаксорных (СЭ-Р) в области (1-2х) = 0.08-0.40 и затем до свойств дипольного стекла со слабыми корреляциями в области (1-2х) > 0.40. Найдено, что образцы, с х = 0.434 и 0.446 ниже Тс = 414 и 445 К спонтанно переходят в СЭ-состояние; в образцах с х= 0.42 приложение электрического поля 2.0 кВ/см индуцирует переход из СЭ-Р в СЭ-состояние с Тс = 350 К, которое сохраняется и после снятия паля.

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