chemicallytechFine Chemical TechnologiesТонкие химические технологии2410-65932686-7575MIREA – Russian Technological University (RTU MIREA).10.32362/2410-6593-2017-12-6-83-90chemicallytech-127Research ArticleCHEMISTRY AND TECHNOLOGY OF INORGANIC MATERIALSХИМИЯ И ТЕХНОЛОГИЯ НЕОРГАНИЧЕСКИХ МАТЕРИАЛОВSYNTHESIS AND STUDY OF RHENIUM(IV) DISULPHIDEСИНТЕЗ И ИССЛЕДОВАНИЕ ДИСУЛЬФИДА РЕНИЯ(IV)ИоновА. М.IonovA. M.

доктор физико-математических наук, профессор

Россия, 142432, Московская область, Черноголовка, ул. Академика Осипьяна, д. 2

Dr.Sc. (Physics and Mathematics), Professor

2, Academica Osipyana st., Chernogolovka, Moscow region, 142432, Russia

noemail@neicon.ruКобринМ. Р.KobrinM. R.

аспирант кафедры химии и технологии редких и рассеянных элементов, наноразмерных и композиционных материалов имени К.А. Большакова И

Россия, 119571, г. Москва, просп. Вернадского, д. 86

Postgraduate Student, K.A. Bolshakov Chair of Chemistry and Technology of Rare and Scattered Elements, Nanoscale and Composite Materials

86, Vernadskogo Pr., Moscow 119571, Russia

noemail@neicon.ruМожчильР. Н.MozhchilR. N.

аспирант

Россия, 142432, Московская область, Черноголовка, ул. Академика Осипьяна, д. 2

Postgraduate Student

2, Academica Osipyana st., Chernogolovka, Moscow region, 142432, Russia

noemail@neicon.ruСиговА. С.SigovA. S.

доктор физико-математических наук, профессор, академик РАН, президент

Россия, 119454, Москва, просп. Вернадского, д. 78

Dr.Sc. (Physics and Mathematics), Professor, Academician of RAS, President

78, Vernadskogo Pr., Moscow 119454, Russia

noemail@neicon.ruСыровЮ. В.SyrovYu. V.

кандидат физико-математических наук, доцент кафедры материаловедения и технологии функциональных материалов и структур

119435, г. Москва, ул. Малая Пироговская, д. 1

Ph.D. (Physics and Mathematics), Associate Professor of the Chair of Materials Science and Technology of Functional Materials and Structures,

1, Malaya Pirogovskaya st., Moscow 119435, Russia

noemail@neicon.ruФомичевВ. В.FomichevV. V.

доктор химических наук, профессор кафедры химии и технологии редких и рассеянных элементов, наноразмерных и композиционных материалов имени К.А. Большакова

Россия, 119571, Москва, просп. Вернадского, д. 86

Dr.Sc. (Chemistry), Professor, K.A. Bolshakov Chair of Chemistry and Technology of Rare and Scattered Elements, Nanoscale and Composite Materials

86, Vernadskogo Pr., Moscow 119571, Russia

noemail@neicon.ruИнститут физики твердого тела Российской академии наукРоссияInstitute of Solid State Physics RASRussian FederationМосковский технологический университетРоссияMoscow Technological UniversitRussian Federation2017281220171268390Copyright © Ionov A.M., Kobrin M.R., Mozhchil R.N., Sigov A.S., Syrov Y.V., Fomichev V.V., 20172017Ионов А.М., Кобрин М.Р., Можчиль Р.Н., Сигов А.С., Сыров Ю.В., Фомичев В.В.Ionov A.M., Kobrin M.R., Mozhchil R.N., Sigov A.S., Syrov Y.V., Fomichev V.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.finechem-mirea.ru/jour/article/view/127

Synthesis and study of complex chalcogenides in the low oxidation state opens unexpected new opportunities of studying some fundamental problems of condensed matter physics. Dichalcogenides of transition metals, i.e., compounds with the general formula MX2, where M is molybdenum, tungsten, rhenium etc., and X is sulphur, selenium or tellurium, are especially interesting. These dichalcogenides find applications in optoelectronic devices, radiophotonics, in laser physics, communication technology, etc. This study contains a survey of literature concerning the synthesis of sulphides of transition elements from different groups of the Periodic table in low oxidation states. A method of direct hightemperature synthesis of ReS2 from source components has been proposed and implemented. The synthesized compound was identified by the X-ray fluorescence, method of photoelectron spectroscopy and IR absorption spectroscopy. We show that rhenium(IV) disulphide crystallizes in CdI2 structural type. X-ray photoelectron spectroscopy shows that rhenium in the oxidation state of four is present. IR spectrum shows that rhenium(IV) disulphide structure in contrast to molybdenum(IV) disulphide is characterized by a greater deformation of the layers forming the crystal structure.

Синтез и исследование халькогенидов переходных элементов в низких степенях окисления открывают широкие перспективы для развития фундаментальных проблем физики конденсированного состояния и создания новых функциональных материалов электронной техники. Особый интерес представляют дихалькогениды переходных металлов состава МХ2, где М - Mo, W, Re; Х - S, Se, Te, которые находят применение в устройствах оптоэлектроники, радиофотоники, в лазерной физике, технике связи и т.д. В настоящей работе выполнен анализ литературных данных по синтезу и исследованию сульфидов переходных элементов вышеуказанного состава. Предложен и реализован способ прямого высокотемпературного синтеза ReS2 из исходных элементов. Полученное соединение идентифицировано методами рентгенофазового анализа, рентгенофотоэлектронной и ИК-спектроскопии. Показано, что оно кристаллизуется в структурном типе CdI2, и рений присутствует в синтезированном дисульфиде в степени окисления +4. На основании анализа ИК-спектров в длинноволновой области сделан вывод, что структура дисульфида рения характеризуется уменьшением угла при мостиковом атоме рения по сравнению с дисульфидом молибдена. Это приводит к деформации и сжатию слоев, формирующих кристаллическую структуру.

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The authors declare that there are no conflicts of interest present.